SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature

In this work we present the results obtained implanting high concentration (10(20) cm(-3)) of P at 300degreesC. The effect of the post-implantation annealing on the electrical properties and the surface morphology of the doped layer are investigated for different annealing temperatures. When the annealing temperature changed between 1650 and 1300degreesC the sheet resistance of the 0.2 mum thick implanted layers was in the range 300-900 Omega/sq. Nevertheless, the morphology of the implanted and uniplanted SiC surface was stronger modified by the higher post-implantation annealing temperature. I-V measurements were performed on the fabricated diodes to test the electrical performance of the n+/p junctions obtained with different post-implantation annealing temperature. Leakage current densities in the range 10(-7)-10(-8) Acm(-2) were measured at 100V and most diodes had the break-down at 720V, independently of the annealing conditions.