Improved thermal stability of cobalt silicide formed by ion beam assisted deposition on polysilicon

The thermal stability of thin cobalt silicide films obtained by ion beam assisted deposition of Co on polycrystalline Si has been studied. A large improvement has been obtained depositing Co at 470¬?C with an Ar+ beam energy of 1000 eV: no increase of the sheet resistance was observed until 1000¬?C. the improvement has been connected to the stability of the CoSi2/polysilicon interface. ¬© 1995.