MOCVD of Vanadium Oxide Films with a Novel Vanadium(III) Precursor

In this communication we report the synthesis and characterization of the vanadium (III) alkoxide [V(OCMe(2)CH(2)OMe)(3)], which presents an appreciable volatility (55 degrees C/1.5 Torr), its successful use as MOCVD precursor for the deposition of pure VO(2) and V(2)O(5) films and the characterization of the films by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD) and Cyclic Voltammetry.