SCHOTTKY CONTACT BARRIER HEIGHT ENHANCEMENT ON PARA-TYPE SILICON BY WET CHEMICAL ETCHING

Abstract. A wet chemical etch preceding the usual cleaning process has been found to yield Schottky barriers of high values on p-type silicon. This procedure produces a passivated surface layer which has resulted in A1/0-Si Schottky diodes with barrier height of 0.75 eV and ideality factor of 1.15. Measurements have confirmed the presence of electrically active donor-like states in this surface layer. The origin of the donor states is explained in terms of the deactivation of the boron acceptor by the formation of H +B- pairs.