THE EFFECTS OF ROUGHNESS AND COMPOSITION VARIATION AT THE INP/INGAAS AND INGAAS/INP INTERFACES ON CBE GROWN QUANTUM-WELLS

Quantum wells of the InGaAs/InP system grown with CBE and MOVPE techniques show compositional changes at the heterointerfaces. The interface layers (strained on the InP substrate) modify the energy profile of the well and the strain can be the cause of deviations from the simple layer-by-layer growth mechanism. Using FTPL, HREM and HRXRD characterization techniques, we will discuss the results of a model for the prediction of the InP/InGaAs/InP interface composition of CBE structures. The role of the growth interruption in order to obtain highly uniform QWs will be clearly emphasized.