EFFECT OF RAPID THERMAL ANNEALING ON ELECTRICAL AND STRUCTURAL-PROPERTIES OF SILICON

Rapid thermal annealing (RTA) techniques, widely employed in device technology, can be used to study defect formation and annealing mechanisms. Interesting results have been obtained by us comparing the effects of electron beam and lamp rapid treatments on the equilibria between residual impurities, point defects, and their aggregates during low-temperature annealing of monocrystalline silicon. The lamp treatment results are comparable to short-time furnace ones, while the presence of defects induced by the RTA treatment in itself has been detected after the use of electron beam.