Fabrication and characterization of resonant cavity enhanced silicon photodetectors at 1.55 ?m

Conference Paper
Publication Date:
2008
abstract:
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 ?m, are reported.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/237070
Published in:
IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (PRINT)
Series