Thick oxidized porous silicon layer as thermo-insulating material for high temperature operating thin and thick film gas sensors

Thick oxidized porous silicon layers (OPS), which thickness ranges from 5 to 35 mu m, have been realized on p(+) Si substrate using Si anodization followed by thermal oxidation of the formed PS. A mesoporous. Si structure with a 55% porosity has been selected as starting material. A phosphorus implantation of patterned p(+) Si substrate has been performed to take advantage of the selective anodization of p(+) vs. n(+) Si. After the oxidation, the stoichiometry of the oxidized PS layer has been evaluated using the RES and the EDAX microanalysis techniques. Patterned wafers with hundreds of thin or thick oxidized PS islands show a consistent wafer warpage after the thermal oxidation.