Raman and photoluminescence spectroscopy of Si nanocrystals: Evidence of a form factor

We investigated the quantum confinement in Si nanocrystals embedded in a SiO2 matrix. The size was accurately controlled in the range 3-8 nm by annealing at high temperature Si/SiO2 multilayers fabricated by chemical vapour deposition. Raman shift and line width were compared with existing theoretical models for each cluster size. We found evidence of uni-dimensional confinement in 3 nm crystals, whereas for 4.5 nm crystals the confinement appears three-dimensional. This conclusion is supported by the luminescence spectra shifting towards higher wavelengths for the smaller size, in opposite direction for larger sizes.