X-Ray diffraction and SEM investigation of the crystal quality of GaAs/Ge heterostructures

GaAs/Ge heterostructures have been grown by metal organic vapour phase epitaxy and investigated by X-ray and SEM techniques. X-ray double crystal diffractometry has been used to study the elastic strain release, while the generation of misfit dislocations has been investigated by X-ray topography and SEM integral cathodoluminescence. The results have not been found to agree with the theoretical predictions. From the shape of the Bragg peaks, some information about the interdiffusion processes and the crystal quality of the layers have also been obtained.