Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

Resistivity and Hall effect measurements on n-type undoped In0.17 Ga0.83 N alloy grown by metal-organic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17 Ga0.83 N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of ∼9.2×10. 9 cm−3. An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity of In0.17 Ga0.83 N exhibits a metal-semiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T180) and it becomes positive at relatively high temperatures (T180). In addition to this, a negative magnetoresistivity (MR) has been observed below 180 K. The temperature dependent resistivity of In0.17 Ga0.83 N alloy is explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T180). At high temperatures (T180) the temperature dependent resistivity obeys T2 law.