Properties of ferromagnetic josephson junctions for memory applications

In this paper, we give a characterization of the RF effect of memory switching on Nb-Al/AlOx-(Nb)-Pd0.99Fe0.01-Nb Josephson junctions as a function of magnetic field pulse amplitude and duration, alongside with an electrodynamical characterization of such junctions, in comparison with standard Nb-Al/AlOx-Nb tunnel junctions. The use of microwaves to tune the switching parameters of magnetic Josephson junctions is a step in the development of novel addressing schemes aimed at improving the performances of superconducting memories.