Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique

One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystal-crucible contact. In this work, we show that it is possible to avoid this interaction by inserting a stable boron oxide liquid layer between the crucible and the melt. This layer improves the structural properties of the grown crystals, reducing the etch pit density to the 10(3) cm(-3) range. The possible origins for the formation of a stable boron oxide layer are discussed.