Publication Date:
1988
abstract:
The structure and thermodynamics of some gas phase molecular reactants [As:. As,.
Ga(CH,)?] used in MBE (molecular beam epitaxy) and MO-MBE (metal-organic molecular
beam epitaxy) has been studied by Hartree-Fock-Roothaan molecular-orbitals linear-comhination-of-atomic-orbitals
self-consistent-field (HFR-MO-LCAO-SCF) ah initio methods. A first
attempt to simulate the sticking of a gallium atom at the (100) surface of GaAs has also been
made.
Iris type:
01.01 Articolo in rivista
Keywords:
semiconductors
List of contributors:
Tomassini, Norberto; AMORE BONAPASTA, Aldo; Lapiccirella, Andrea; Scavia, Guido
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