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Molecular cluster studies of the crystal growth process in MBE and MO-MBE

Academic Article
Publication Date:
1988
abstract:
The structure and thermodynamics of some gas phase molecular reactants [As:. As,. Ga(CH,)?] used in MBE (molecular beam epitaxy) and MO-MBE (metal-organic molecular beam epitaxy) has been studied by Hartree-Fock-Roothaan molecular-orbitals linear-comhination-of-atomic-orbitals self-consistent-field (HFR-MO-LCAO-SCF) ah initio methods. A first attempt to simulate the sticking of a gallium atom at the (100) surface of GaAs has also been made.
Iris type:
01.01 Articolo in rivista
Keywords:
semiconductors
List of contributors:
Tomassini, Norberto; AMORE BONAPASTA, Aldo; Lapiccirella, Andrea; Scavia, Guido
Handle:
https://iris.cnr.it/handle/20.500.14243/347322
Published in:
SURFACE SCIENCE
Journal
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