X-RAY DETERMINATION OF LATTICE DAMAGE DEPTHPROFILES DUE TO ELECTRONIC AND NUCLEAR-ENERGY LOSSES IN SILICON IMPLANTED WITH MEV BORON IONS

By means of X-ray analysis of silicon implanted with 1.5 MeV boron ions, a close correlation was found between the depth profiles of the static atomic disorder and the electronic energy loss, and between the lattice expansion and the nuclear energy loss.