Investigation of InxGa1-xN multi-quantum wells for energy efficiency light emitting diode
Contributo in Atti di convegno
Data di Pubblicazione:
2017
Abstract:
The work demonstrates the achievement of high intensity and stable photoluminescence of InGaN QWs which are the active parts of GaN based semipolar LEDs
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
LED × InGaN/GaN × Photoluminescence × TEM
Elenco autori:
Frigeri, Cesare
Link alla scheda completa:
Titolo del libro:
Proc. of the International Scientific Conference on Sustainable Development Goals-2017