A quantitative study of the boron acceptor in diamond by Fourier-transform photocurrent spectroscopy

Fourier-transform photocurrent spectroscopy (FTPS) was used as a sensitive spectroscopic method to study boron doping in diamond layers, deposited by microwave plasma enhanced chemical vapor deposition (CVD). Results were compared to boron doped single crystals, synthesized at high pressure and high temperature. Introduction of boron increases the photosensitivity of diamond; the measured spectrum of excited states of the boron acceptor depends both on the crystal perfection and the boron concentration. The spectrum of excited states is a clear fingerprint of the presence of substitutional boron (up to 31 absorption lines have been identified). A quantitative assessment of the substitutional boron concentration is possible and the sensitivity of FTPS in combination with photothermal ionization spectroscopy (PITS) for boron detection in diamond is estimated to be better then 1 part per billion (ppb). © 2004 Elsevier B.V. All rights reserved.