Tungsten doped vanadium dioxide thin films prepared by atmospheric pressure chemical vapour deposition from vanadyl acetylacetonate and tungsten hexachloride

The atmospheric pressure chemical vapour deposition reaction of vanadyl acetylacetonate and tungsten hexachloride led to the production of thin films of tungsten doped monoclinic vanadium dioxide on glass substrates. Scanning electron microscopy indicated that the films had a columnar island growth morphology. Transmission and reflectance measurements elucidated a significant change in properties in the IR portion of the spectrum either side of the metal to semiconductor transition. Variable temperature transmission studies show that the metal to semiconductor transition was lowered by doping tungsten into the films and that this effect was dependent on the amount of tungsten doping. © 2007 Elsevier B.V. All rights reserved.