Data di Pubblicazione:
2006
Abstract:
The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Si(100)
Elenco autori:
Nannarone, Stefano; Mahne, Nicola; Pedio, Maddalena; Borgatti, Francesco; Giglia, Angelo; Doyle, BRYAN PATRICK
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