INSITU X-RAY STUDIES OF OMVPE GROWTH

Contributo in Atti di convegno
Data di Pubblicazione:
1992
Abstract:
This paper summarizes recent in situ x-ray analyses of the growth of GaAs by organometallic vapor phase epitaxy (OMVPE). This growth was carried out using tertiarybutylarsine (TBAs) and trimethylgallium (TMG) as the source materials. Examples of in situ x-ray measurements are given including x-ray absorption studies of gas phase behavior and x-ray scattering studies of layer-by-layer growth.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/120487
Titolo del libro:
ADVANCED SEMICONDUCTOR EPITAXIAL GROWTH PROCESSES AND LATERAL AND VERTICAL FABRICATION
Pubblicato in:
PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING
Series