GROWTH PARAMETER OPTIMIZATION OF SHORT-PERIOD (LESS-THAN-50-ANGSTROM INGAAS/INP SHORT SHORT-PERIOD SUPERLATTICES BY CHEMICAL BEAM EPITAXY FOR PHOTONIC DEVICES

In this work, we describe the influence of the growth parameters on optical and crystallographic properties of InGaAs/InP short period superlattices (SPSLs). In particular, the optimized growth conditions applied for multi-quantum wells (MQWs) are no longer valid when the total period thickness is below 85 angstrom and quasi-continuous growth interruption times are required. Structures with 31 angstrom period thickness with excellent high resolution X-Tay diffraction (HRXRD) and low temperature photoluminescence (PL) linewidth of 28 meV have been grown. Differential transmission spectra of barrier reservoir and quantum well electron transfer (BRAQWET) structures in which SPSLs substitute the corresponding quaternary (1.25 mum) layer show similar behaviour in the corresponding structures.