EXCITON SPECTROSCOPY IN ZN1-XCDXSE/ZNSE QUANTUM-WELLS

Systematic temperature-dependent studies of optical absorption and photoluminescence in ZnCdSe/ZnSe strained-layer multiple-quantum-well samples grown by molecular-beam epitaxy were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Exciton binding energies calculated by means of a variational method were found in good agreement with the experimental values obtained from the analysis of the absorption line shapes. The well-width dependence of the excitonic eigenstates were well reproduced by envelope-function calculations that included the effect of pseudomorphic strain.