OPTIMIZATION OF INTERFACE PARAMETERS AND BULK PROPERTIES IN ZNSE-GAAS HETEROSTRUCTURES

The flux parameters employed during molecular beam epitaxy of ZnSe on GaAs control both the heterojunction band alignment and the optical quality of the II-VI wide-gap layer. Independent optimization of the band discontinuities and ZnSe optical properties was achieved by fabricating a 2-nm-thick interface layer in nonstoichiometric conditions to control the band alignment, followed by the optically active layer in near-stoichiometric conditions.