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CVD of MgO Thin Films from Bis(methylcyclopentadienyl) magnesium

Academic Article
Publication Date:
2007
abstract:
Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range 400–550 °C, using bis(methylcyclopentadienyl)magnesium [Mg(CH3-C5H4)2] as the precursor. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical absorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO (periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.
Iris type:
01.01 Articolo in rivista
Keywords:
Magnesium oxide; precursor; thin films
List of contributors:
EL HABRA, Naida; Carta, Giovanni; Barreca, Davide; Crociani, Laura; Rossetto, GILBERTO LUCIO; Zanella, Pierino
Authors of the University:
BARRECA DAVIDE
CROCIANI LAURA
EL HABRA NAIDA
Handle:
https://iris.cnr.it/handle/20.500.14243/153507
Published in:
CHEMICAL VAPOR DEPOSITION
Journal
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URL

http://onlinelibrary.wiley.com/doi/10.1002/cvde.200606574/pdf
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