Measurements of surface and bulk radiation damage effects in silicon detectors for Phase-2 CMS Outer Tracker

In this work we address the effects of bulk and surface damages on detectors fabricated by Hamamatsu on standard float zone (FZ) p-type material with an active thickness of 290 mu m or thinned to 240 mu m. In order to disentangle the effects of the two main radiation damage mechanisms, ionization effects and atomic displacement, the structures underwent two types of radiation: X-ray with doses from 0.05 to 70 Mrad (SiO2) and neutron in the range of 1-10 x 10(14 )n(eq)/cm(2) 1 MeV equivalent. The combined surface and bulk damage could be investigated in structures that underwent both types of irradiation. A wide set of measurements has been carried out on the test structures for a complete characterization.