Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy

In this work the silicon self-interstitial (I) diffusion in trap-containing molecular beam epitaxy Si layers is investigated. The Is are produced by Si ion implantation, and the I supersaturation is reported as a function of the depth and the annealing time. These data are discussed on the basis of two alternative models proposed in literature (''effective diffusivity'' model and ''filling trap'' model). This analysis demonstrates that the second model is more appropriate to describe the proposed phenomenology, since it explains both the increase of the I penetration depth as a function of the implant dose and the very rapid change of the supersaturation versus time. Moreover, the proposed model takes account for the I recombination at the surface.