Monte Carlo simulations of defects evolution and clustering in ion-implanted Silicon

We present a lattice Monte Carlo investigation on the evolution of a point defects super-saturation in a Si matrix. The simulations are based on local interaction models, which allow us to take into account reliably the energetics of vacancy-type and interstitial-type clusters obtained by quantum mechanical calculations. In particular, the dependence of cluster stability and reactivity on cluster size and geometrical configuration is properly considered. Our simulations show that the stability of specific cluster configurations strongly affects the kinetic evolution of the defect ensemble. Implications of these results in the description of extended defects formation in Si are discussed.