Nearly-free electronlike surface resonance of a beta-Si3N4(0001)/Si(111)-8 × 8 interface
Academic Article
Publication Date:
2015
abstract:
We report the discovery of a nearly-free electronlike resonant state for a ?-Si3N4(0001)-8×8 layer grown on Si(111), as observed by angle-resolved photoemission and scanning tunneling spectroscopy. Comparison with measurements performed on a Si(111)-7×7 surface helped us in the identification of the band. It is found that this parabolic state is degenerate with surface projected bulk bands of the Si(111) substrate.
Iris type:
01.01 Articolo in rivista
Keywords:
SILICON-NITRIDE; SI(111) SURFACE; MICROSCOPY; FILMS; SEMICONDUCTORS; BETA-SI3N4; GROWTH
List of contributors: