Modeling of diamond field-effect transistors for RF IC development

On the basis of RF characteristics and measured smallsignal parameters, an equivalent circuit model was formulated and characterized for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond. Starting from on-wafer measurements, a bias-dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond. © 2009 Wiley Periodicals, Inc.