Ion implanted lateral p+-i-n+ diodes on HPSI 4H-SiC

Conference Poster
Publication Date:
2014
Iris type:
04.03 Poster in Atti di convegno
Keywords:
4H-SiC; bipolar diodes; lateral device; ion implantation; annealing
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/270037