Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

We report resistance versus magnetic field measurements for a La(0.65)Sr(0.35)MnO(3)/SrTiO(3)/La(0.65)Sr(0.35)MnO(3) tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 degrees, the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches similar to 1900% at 4 K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.