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Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities

Academic Article
Publication Date:
2008
abstract:
The authors demonstrate the deterministic coupling between a single, site-controlled InGaAs/GaAs pyramidal quantum dot (QD) and a photonic crystal membrane cavity defect. The growth of self-ordered pyramidal QDs in small (300 nm base side) tetrahedral recesses etched on (111)B GaAs substrates was developed in order to allow their integration within the thin GaAs membranes. Accurate (better than 50 nm) positioning of the QD with respect to the optical cavity mode is achieved reproducibly owing to the site control. Coupling of the dot emission with the cavity mode is evidenced in photoluminescence measurements. The deterministic positioning of the pyramidal QDs and the control of their emission spectrum opens the way for devices based on QDs integrated with coupled nanocavities. (c) 2008 American Institute of Physics.
Iris type:
01.01 Articolo in rivista
Keywords:
gallium arsenide; III-V semiconductors; indium compounds; photonic crystals; semiconductor quantum dots
List of contributors:
Sorba, Lucia; Biasiol, Giorgio
Authors of the University:
BIASIOL GIORGIO
SORBA LUCIA
Handle:
https://iris.cnr.it/handle/20.500.14243/119992
Published in:
APPLIED PHYSICS LETTERS
Journal
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URL

http://apl.aip.org/resource/1/applab/v92/i26/p263101_s1
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