Integration of organic based Schottky junctions for crossbar non-volatile memory applications

Small size Schottky junctions using two different synthesized organic semiconductors (oligophenylene-vinylenes) were integrated by standard UV lithography into crossbar arrays. The proposed integration scheme can be applied to a wide class of organics without affecting material properties. Current-voltage characteristics were studied in order to investigate which of the tested compounds could possibly reach the requirements for non-volatile memory applications. All the investigated devices displayed good rectifying properties, ranging from 10(2) to 10(4). On the other hand, one of the compounds reveals higher conductivity and possible reasons for this behavior are discussed. (C) 2008 Elsevier B.V. All rights reserved.