Vertically stacked non-volatile memory devices - material considerations

Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties - from heavily n-type to p-type. Parameters of constructed Schottky and p-n junction are good enough for their application in a new generation of memory devices with cross-bar architecture. (C) 2008 Elsevier B.V. All rights reserved.