Fabrication of RF-MEMS switches on LTCC substrates using PECVD a-Si as sacrificial layer

RF micromechanical switches are fabricated using dry releasing techniques. LTCC is used as substrate. Amorphous silicon, as an alternative sacrificial layer to silicon dioxide, has been used followed by dry plasma release. The silicon deposition has been optimized to obtain low mechanical stress and allowing thick sacrificial layer deposition. The use of amorphous silicon extends the flexibility of the design of the devices and of the packaging procedure.