Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
Conference Paper
Publication Date:
2014
abstract:
In this work the temperature dependent currentvoltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
4H-SiC; PiN diode; recombination-generation centers; Temperature dependent
List of contributors:
Puzzanghera, Maurizio; Moscatelli, Francesco; Nipoti, Roberta
Book title:
Ion Implantation Technology (IIT), 2014 20th International Conference on