Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma-assisted MOCVD

hin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PAMOCVD) using a 13.56 MHz O-2 plasma and the Zn(TTA)(2) center dot e tmed (HTTA = 2-thenoyltrifluoroacetone, TMED = N, N, N', N'-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20 W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.