Highly manufacturable/low aspect ratio Si Nano Floating Gate FinFET memories: high speed performances and improved reliability

FinFETs have been proposed for transistor scaling because of their improved robustness to short channel effects and excellent current drive. Recently, the finFET concept together with discrete trap storage has been studied for Flash memory scaling because of the advantage of reduced floating gate interferences and reduced cell-to-cel cross talk in high-density devices. We have realized Si nano-floating gate (NFM) finFET Flash devices with highly scaled active width and channel length. Improved performances and endurance compared with planar NFM devices are observed in 3D structures (fin width down to 20 nm). Localization of the inversion charge favors low aspect ratio finFET Flash devices with the additional advantage of improved manufacturability.