Atomic disordering processes in crystalline GeTe induced by ion irradiation

The damaging process of GeTe up to amorphization has been studied by introducing controlled levels of disorder by irradiation with 150 keV Ar ions. In situ reflectivity measurements and ex-situ resistance and Raman spectroscopy analysis have been employed to study the impact of ion bombardment on the electrical conduction properties and on the bonding. The results obtained are indicative for three different stages of film damage. The first step appears to be dominated by point defects, affecting the temperature coefficient of resistance (TCR) and inducing a transition from positive (metallic conduction) to negative TCR values (conduction dominated by localized states), whilst the material still remains crystalline. The second step is characterized by the annealing of the defects induced, presumably, by the formation of complex defects that act as sinks for point defect recombination. This process is facilitated by the high atomic mobility. The third phase of damage starts at a fluence of 3.5 × 10 cm and finally converts the material to the amorphous state, characterized by higher resistance and decreased optical reflectivity. The modifications observed upon ion irradiation provide important insights into the possible states that can be achieved in crystalline GeTe through different local atomic arrangements towards amorphization.