Electronic structure and morphology of SiC films grown on Si(111) using C60 as a precursor

We report on the electronic, compositional and morphological properties of ultra-thin and thick SiC films produced via disruption of C60 cages onto the Si(111) 7×7 surface. The influence of the reaction temperature and the growth mode of the films have been investigated by means of photoemission spectroscopy, low energy electron diffraction, atomic force microscopy, and Rutherford backscattering.