Publication Date:
2005
abstract:
We compare the luminescence from InAsN/GaAs and InAsN/GaAsN quantum dots with that
obtained from InGaNAsN/GaAs quantum wells grown in the same experimental system. All
structures were engineered to emit near 1.3 mm at room temperature. Quantum-dot emitters were
found to exhibit higher thermal stability and did not require postgrowth annealing. The use of
GaAsN barriers as opposed to GaAs barriers provided for narrower and more intense quantum-dot
luminescence.
Iris type:
01.01 Articolo in rivista
List of contributors:
Franciosi, Alfonso; Rubini, Silvia; Carlino, Elvio; Martelli, Faustino
Published in: