Data di Pubblicazione:
2010
Abstract:
We study the spatiotemporal pattern of the near-field intensity correlations generated by parametric scattering processes in a planar optical cavity. A generalized Bogolubov–de Gennes model is used to compute the second-order field correlation function. Analytic approximations are developed to understand the numerical results in the different regimes. The correlation pattern is found to be robust against a realistic disorder for state-of-the-art semiconductor systems.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
luminescence; semiconductor microcavity; correlations
Elenco autori:
Carusotto, Iacopo
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