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Analysis of dispersive electroacoustic coupling configurations for application to gigahertz-band, temperature-compensated AlN-based acoustic devices

Academic Article
Publication Date:
2008
abstract:
AlN films, 1.4–6.2 ?m thick, were sputtered on z-cut Al2O3 substrates and four electroacoustic coupling configurations were realized and characterized for x and y surface acoustic wave (SAW) propagation directions. The temperature-coefficient of delay dispersion curves of the four configurations was experimentally evaluated and eight temperature-compensated points were estimated. The velocity anisotropy of the multilayers was investigated for different AlN film thicknesses, electric excitation conditions, and temperature values. The design trade-offs required for temperature-compensated, 50 ? matched, gigahertz-range, enhanced-coupling, low loss SAW devices are provided for the four dispersive coupling configurations.
Iris type:
01.01 Articolo in rivista
List of contributors:
Caliendo, Cinzia
Authors of the University:
CALIENDO CINZIA
Handle:
https://iris.cnr.it/handle/20.500.14243/30840
Published in:
APPLIED PHYSICS LETTERS
Journal
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URL

http://link.aip.org/link/APPLAB/v92/i10/p103501/s1
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