Publication Date:
2007
abstract:
The merging of spintronics with organic RAM technology is demonstrated experimentally for the first time with the multipurpose device reported here. An unconventional configuration sandwiching a ?-conjugated organic semiconductor between two ferromagnetic electrodes (see figure) allows two different, unrelated physical effects to be superimposed. The novel single-cell device shows both magnetoresistance and nonvolatile electric memory.
Iris type:
01.01 Articolo in rivista
Keywords:
Magnetoresistance; Spintronics; Tris(8-hydroxyquinoline) aluminum
List of contributors:
Riminucci, Alberto; Zhan, Yiqiang; HUESO ARROYO, LUIS EDUARDO; Dediu, Valentin; Bergenti, Ilaria
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