CVD of nanosized ZnS and CdS thin films from single-source precursors

A Chemical Vapor Deposition (CVD) route to nanosized ZnS and CdS thin films was developed. The layers were deposited on SiO2 substrates in a N2 atmosphere at temperatures between 473 and 723 K using M(O-iPrXan)2 (M=Zn,Cd; O-iPrXan=S2COCH(CH3)2) as single-source precursors. Thermal decomposition and fragmentation of M(O-iPrXan)2 compounds were investigated by thermal analyses and mass spectrometry. The sulfide films were thoroughly characterized in their composition, nanostructure and morphology by means of several analytical techniques. Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy, X-ray Excited Auger Electron Spectroscopy and Secondary Ion Mass Spectrometry. Film nanostructure and surface topography were investigated as a function of the synthesis conditions by Glancing Incidence X-Ray Diffraction and Atomic Force Microscopy, respectively. Optical absorption properties were also studied. Nanophasic and contaminant-free ZnS and CdS thin films with average crystallite size lower than 25 nm were obtained. The layers mainly contained the hexagonal (alpha) sulfide phase and displayed a smooth and regular surface morphology. In the present work, the influence of synthesis conditions on film characteristics is analyzed and discussed.