Evaluation of the degradation of floating-gate memories with Al2O3 tunnel oxide

In this work, the authors evaluate the potentialities of HfAlO materials as possible candidates for the interpoly dielectrics of future flash memory devices. HfAlO single-layer and oxide/HfAlO/oxide triple-layer stacks were processed and analyzed in terms of coupling and insulating capabilities. The electron conduction modes in these materials, at different temperatures, were also investigated. Finally, by means of analytical models matched with experimental data, the authors extrapolate the programming characteristics of future flash memory nodes integrating HfAlO as interpoly dielectrics.