Clustering effects in a low coverage deposition of gold on the GaAs (001) ?2-(2x4) surface: an STM and theoretical study
Articolo
Data di Pubblicazione:
2002
Abstract:
A comparative study of gold deposition on the GaAs(0 0 1)-b2(2 4) surface based on scanning tunneling microscopy
(STM)-ultra high vacuum (UHV) and Car-Parrinello calculations has been carried out. The theoretical results
show that the preferential reactive sites of an isolated Au adatom on the GaAs surface drive a self-organizing
process of further Au adatoms onto the surface, thus determining an Au clusterization onto the two-As-dimer cell. On
the other hand, STM-UHV images reveal, for Au depositions <1 ML, a decorating effect of gold towards the
GaAs(0 0 1)-b2(2 4) unit cell. In detail, gold clusters tend to cover the two-As-dimer cell without modifying the (2 4)
reconstruction, in agreement with the theoretical results. Moreover, a fine comparison between the STM images of gold
clusters and the theoretical results reveals that each of these clusters can be composed of four Au adatoms directly
interacting with the two As dimers of the GaAs unit cell. An STM-UHV analysis of the surface for a deposition >1ML
suggests that gold clusterizes into 3D clusters rather than forming a 2D layer.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Density functional calculations; Scanning tunneling microscopy; Gold; Gallium arsenide; Metal-semiconductor interfaces
Elenco autori:
AMORE BONAPASTA, Aldo; Scavia, Guido
Link alla scheda completa:
Pubblicato in: