Microwave annealing of Al+ implanted 4H-SiC: towards device fabrication

Carrier transport in Al+ implanted 4H-SiC for Al concentrations in the 5 x 10(19) - 5 x 10(20) cm(-3) range and after 2000 degrees C/30s microwave annealing is characterized. Each sample resistivity decreases with increasing temperature and attains values of about 10(-2) Omega cm for temperatures >= 600 K. At room temperature, resistivity decreases from 4 x 10(-1) Omega cm to 3 x 10(-2) Omega cm with the increase of implanted Al concentration. The onset of an impurity band conduction around room temperature takes place for implanted Al concentrations >= 3 x 10(20) cm(-3). Al+ implanted and microwave annealed 4H-SiC vertical p(+)-i-n diodes have shown promising forward characteristics.