Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si

We have investigated 3C-SiC layers grown on silicon and on poly-Si in order to realize test MEMS structures. The residual strain of the films was investigated by the fabrication of cantilevers, beams, springs and we successfully fabricated a Double-Ended-Tuning-Fork double clamped SiC resonator on the film, with perfectly aligned actuation electrode.