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Hysteresis-type current-voltage characteristics in Au/eumelanin/ITO/glass structure: Towards melanin based memory

Academic Article
Publication Date:
2010
abstract:
Hysteresis behaviour of the current-voltage characteristics collected on spin coated synthetic eumelanin layer embedded in the Au/eumelanin/ITO/glass structure is shown. The effect has been observed under dark both in air and vacuum environment and its magnitude has been found related to the eumelanin hydration state. Moreover, in vacuum and under white light illumination, enhancement of the hysteresis loop area respect to those collected under dark has been observed. Space charge storage and charge trapping/detrapping as possible mechanisms responsible of the observed current-voltage behaviour are discussed. Preliminary experimental results have evidenced the possible integration of eumelanin layers in electro-optical charge storage based memory devices.
Iris type:
01.01 Articolo in rivista
Keywords:
Eumelanin layer; hysteresis effect; memoy device
List of contributors:
Farinola, GIANLUCA MARIA; Ambrico, Marianna; Ambrico, PAOLO FRANCESCO; Cicco, STEFANIA ROBERTA; Cardone, Antonio
Authors of the University:
AMBRICO MARIANNA
AMBRICO PAOLO FRANCESCO
CARDONE ANTONIO
CICCO STEFANIA ROBERTA
Handle:
https://iris.cnr.it/handle/20.500.14243/144776
Published in:
ORGANIC ELECTRONICS
Journal
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